View K2003_37294.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK2003-01MR
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage www..com VGS=30V Guarantee Avalanche-proof
FUJI POWER MOSFET
FAP-IIA SERIES
Outline Drawings
TO-220F15
Applications
Switching regulators UPS DC-DC converters General purpose power amplifier
2.54
3. Source
JEDEC EIAJ
SC-67
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] IDR VGS PD Tch Tstg Rating 600 4 16 4 30 40 +150 -55 to +150 Unit V A A A V W C C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=600V VGS=0V VGS=30V VDS=0V ID=2A VGS=10V ID=2A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V RG=10 ID=4A VGS=10V L=100H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C
Min.
600 2.5 Tch=25C Tch=125C
Typ.
3.0 10 0.2 10 2.0 4 1000 85 20 20 15 45 15 1.1 400 2
Max.
3.5 500 1.0 100 2.4 1500 130 30 30 25 70 25 1.65
Units
V V A mA nA S pF
2
ns A V ns C
4
Thermal characteristics
Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case
Min.
Typ.
Max.
62.5 3.125
Units
C/W C/W
1
FUJI POWER MOSFET
Characteristics
Typical output characteristics
8 10
2SK2003-01MR
On state resistance vs. Tch
8 RDS(on) []
6
ID [A]
6
4
www..com 4 2 2
0 0 4 8 12 16 20 24 28 32 VDS [ V ]
0 -50
0
50 Tch [ C ]
100
150
Typical transfer characteristics
10 8
Typical Drain-Source on state resistance vs. ID
8 6
6 ID [A] 4
RDS(on) [] 4
2 2
0 0 2 4 6 VGS [ V ] 8 10
0 0 2 ID [ A ] 4 6
Typical forward transconductance vs. ID
10 5.0
Gate threshold voltage vs. Tch
8
4.0
6 gfs [S] 4
3.0 VGS(th) [V] 2.0
2
1.0
0
0
2
4 ID [ A ]
6
8
10
0 -50
0
50 Tch [ C ]
100
150
2
FUJI POWER MOSFET
Typical capacitance vs. VDS
101 500
2SK2003-01MR
Typical input charge
25
400 100 C [nF]
20
VDS 300 [V]
15 VGS [V] 10
200 www..com 10-1 100
5
10-2 0 10 20 VDS [ V ] 30 40
0
0
10
20
30
40
50
0
Qg [ nC ]
Forward characteristics of reverse diode
10
1
Allowable power dissipation vs. Tc
60
50
100 IF [A] 10-1
40
PD 30 [W] 20
10
10-2 0
0.5 VSD [ V ]
1.0
1.5
0 0 50 Tc [ C ] 100 150
Safe operating area
102
Transient thermal impedance
101 100 Rth [C/W] 10-1 10-1 ID [A] 100
10-2 10-5
10-4
10-3
10-2 t [ sec. ]
10-1
100
101
10-2 0 10
101
102 VDS [ V ]
103
3

▲Up To Search▲

Price & Availability of K2003

	To Download K2003 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .